저널

Pt thin film of about 7000$AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$AA$ thickness was deposited at working gas pressure of $2.0{ imes}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{circ}C$(Ts), sheet resistance(Rs), resistivity($ ho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$Omega$/$square$, 27.60$muOmega$-cm and $3350 ppm/^{circ}C$. When the film was annealed at $1000^{circ}C$ for 240min in hydrogen ambient, Rs, $ ho$ and TCR were respectively 0.236$Omega$/$square$, 15.18$muOmega$-cm and 3716 ppm/$3716 ppm/^{circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $ ho$ and TCR were respectively 0.335$Omega$/$square$, 22.45$muOmega$-cm and $3427 ppm/^{circ}C$. When the film was annealed at $1000^{circ}C$ for 240min, Rs, $ ho$and TCR were respectively 0.224/$Omega$$square$, 14$muOmega$-cm and $3760 ppm/^{circ}C$ and the characteristics of the film were much improved.