Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


한국표면공학회지 (40권3호 117-124)

A Study on the Annealed Properties of ITO Thin Film Deposited by RF-superimposed DC Reactive Magnetron Sputtering

RF/DC 동시인가 마그네트론 스퍼터링 방법으로 증착된 ITO 박막의 열처리 특성 연구

Moon, Jin-Wook;Kim, Dong-Won;

경기대학교 재료공학과;
Department of Advanced Materials Engineering, Kyonggi University;

DOI : 10.5695/JKISE.2007.40.3.117


The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{ imes}10^{-4}{Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{ imes}10^{-4}{Omega}cm;to;2.3{ imes}10^{-4}{Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{ imes}10^{20}/cm^3;to;6.4{ imes}10^{20}/cm^3$, from $20.4cm^2/Vsec;to;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.


Indium tin oxide;RF-superimposed DC reactive magnetron sputtering;OLED;Resistvity;Mobility;Surface roughness;Transmittance;