Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


한국표면공학회지 (40권3호 107-112)

Characterization of AI-doped ZnO Films Deposited by DC Magnetron Sputtering

DC 마그네트론 스퍼터링에 의해 증착한 AZO 박막의 특성

Park, Yi-Seop;Lee, Seung-Ho;Song, Pung-Keun;

부산대학교 재료공학과;요업기술원;
School of Materials Science and Engineering, Pusan National University;Korea Institute of Ceramic Engineering and Technology;

DOI : 10.5695/JKISE.2007.40.3.107


Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{ imes}10^{-4}{Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.


Transparent conductive oxide;Ai doped ZnO;Electrical property;Microstructure;DC magnetron sputtering;