Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (37권3호 158-163)

Dependance of the Process Parameters on the Characteristic of the ITO Thin Films

ITO 박막의 공정변수에 따른 특성 연구

김소라;서정은;김상호;

한국기술교육대학교, 신소재공학과;한국기술교육대학교, 신소재공학;

Abstract

ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300AA$ thickness, 65mm substrate-to-target distance, $350^{circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$square$, respectively.

Keywords

Indium Tin Oxide (ITO);RF Sputtering;Process parameters;Transmittance;Sheet resistance;